Ultrathin Ion-Sensitive Field-Effect Transistor Chips with Bending-Induced Performance Enhancement
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چکیده
منابع مشابه
Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body
Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, with the capacitive-coupling arisen from the DG structure. In order to advance this platform, we h...
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ژورنال
عنوان ژورنال: ACS Applied Electronic Materials
سال: 2020
ISSN: 2637-6113,2637-6113
DOI: 10.1021/acsaelm.0c00489